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NTP6N50
Preferred Devices
Product Preview Power MOSFET 6 Amps, 500 Volts
N-Channel TO-220
Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.
Features http://onsemi.com
* * * * * * * * * *
Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits
6 AMPERES 500 VOLTS RDS(on) = 1700 m
N-Channel D
Typical Applications
G S
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain - Continuous @ TA 25C - Continuous @ TA 100C - Single Pulse (tpv10 s) Total Power Dissipation @ TA 25C Derate above 25C Total Power Dissipation @ TA 25C (Note 1.) Operating and Storage Temperature Range Single Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 100 V, VGS = 10 Vdc, IL(pk) = 6 A, L = 10 mH, VDS = 500 Vdc, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 500 500 "20 "40 6.0 5.0 18 104 0.83 1.75 -55 to +150 180 Adc Apk Watts W/C Watts C mJ 1 Unit Vdc Vdc Vdc 4
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
TO-220AB CASE 221A STYLE 5
NTP6N50 LLYWW 1 Gate 3 Source 2 Drain
2
3
TJ, Tstg EAS
NTP6N50 LL Y WW
= Device Code = Location Code = Year = Work Week
ORDERING INFORMATION
C/W RJC RJA TL 1.2 62.5 260 C Device NTP6N50 Package TO-220AB Shipping 50 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
1. Repetitive rating; pulse width limited by maximum junction temperature.
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
(c) Semiconductor Components Industries, LLC, 2001
1
August, 2001 - Rev. 1
Publication Order Number: NTP6N50/D
NTP6N50
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ =125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 3 Adc) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 6 Adc) (VGS = 10 Vdc, ID = 3 Adc, TJ = 125C) Forward Transconductance (VDS = 15 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 400 Vd ID = 6 Adc, Vdc, Ad VGS = 10 Vdc) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (Note 2.) Reverse Recovery Time (IS = 6 Adc VGS = 0 Vdc, Adc, Vdc diS/dt = 100 A/s) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. (IS = 6 Adc, VGS = 0 Vdc) (IS = 6 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR - - - - - - 0.9 0.8 251 168 83 2.3 1.0 - - - - - C Vdc ns (VDD = 250 Vdc, ID = 6 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 9.0 12 17 12 10 3.0 6.0 20 20 40 30 20 - - nC ns (VDS = 25 Vd VGS = 0 Vdc, Vdc, Vd f = 1.0 MHz) Ciss Coss Crss - - - 520 170 5.0 730 240 20 pF VGS(th) 2.0 - RDS(on) VDS(on) - - gFS - - - 6.7 12.2 11.0 - mhos - 3.1 6.4 1300 4.0 - 1700 Vdc mV/C m V V(BR)DSS 500 - IDSS - - IGSS - - - - 10 100 100 nAdc - 590 - - Vdc mV/C Adc Symbol Min Typ Max Unit
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NTP6N50
10 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) TJ = 25C 8 7V 6 5.5 V 5V 8V VGS = 10 V 9V 6V 6 8 VDS 10 V
4 TJ = 25C 2 TJ = 100C 0 3 TJ = -55C 7
4
2 0 0
4V
4.5 V
4 6 2 8 10 12 14 16 18 20 22 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
24
4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE ()
Figure 2. Transfer Characteristics
4 VGS = 10 V 3 TJ = 100C
3 TJ = 25C 2.5
2 TJ = 25C 1
2
VGS = 10 V VGS = 15 V
TJ = -55C
1.5
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 ID = 3 A VGS = 10 V 10000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150C
2
1000
1.5
1
TJ = 100C 100
0.5 10 100
0 -50
-25
0
25
50
75
100
125
150
150
200
250
300
350
400
450
500
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTP6N50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1000 C, CAPACITANCE (pF) 800 600
VDS = 0 V Ciss
VGS = 0 V
25 QT VDS
500
TJ = 25C
20
400
15 VGS Q1 5 Q2 ID = 6 A TJ = 25C 2 4 6 8 10 12
300
Ciss 400 200 Crss Coss Crss 0 10 5 VGS 0 VDS 5 10 15 20 25
10
200
100
0 0
0 14
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (AMPS) VDS = 50 V ID = 6 A VGS = 10 V t, TIME (ns) 100 td(off) tf 10 tr td(on)
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
6 VGS = 0 V TJ = 25C 4
2
1
1
10 RG, GATE RESISTANCE ()
100
0 0.4
0.5
0.6
0.7
0.8
0.9
1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
100 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C dc 1 10 ms 1 ms 0.1 100 s RDS(on) Limit Thermal Limit Package Limit 1 10 100 1000 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 200 175 150 125 100 75 50 25 0 25
Figure 10. Diode Forward Voltage versus Current
ID = 6 A
10
0.01 0.1
50
75
100
125
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
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NTP6N50
1 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Normalized to RJC at Steady State
0.1
0.01 0.00001
0.0001
0.001
0.01 t, TIME (s)
0.1
1
10
Figure 13. Thermal Response
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NTP6N50
PACKAGE DIMENSIONS
TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
-T- B
4
SEATING PLANE
F T S
C
Q
123
A U K
H Z L V G D N R J
STYLE 5: PIN 1. GATE 2. DRAIN 3 SOURCE
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NTP6N50
Notes
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NTP6N50
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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NTP6N50/D

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